Paper
12 January 1998 Photonic crystals for light-emitting devices
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Abstract
Photonic crystals or photonic bandgap (PBG) structures promise to revolutionize optoelectronics by making anew class of highly efficient, low noise light emitters possible. We present data to show that their properties, in particular 2D systems, have now been fully characterized in the relevant semiconductor material system and at near-IR wavelengths, so effort can be redirected towards making active light emitters. As a first example, we present a semiconductor laser with one output mirror designed according to PBG principles. From threshold and efficiency data, we derive a reflectivity of 95 +/- 10 percent for this mirror, which underlines the viability of the PBG approach for practical devices. In order to realize the full potential of photonic crystal light emitters, however, important material issues need to be considered. Non- radiative recombination, for example, is a big problem when the photonic crystal is an integral part of the active region because of the relatively large areas of exposed surface. Several possible solutions to this problem are presented.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas F. Krauss, Dominique Labilloy, Axel Scherer, and Richard M. De La Rue "Photonic crystals for light-emitting devices", Proc. SPIE 3278, Integrated Optic Devices II, (12 January 1998); https://doi.org/10.1117/12.298214
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CITATIONS
Cited by 11 scholarly publications.
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KEYWORDS
Photonic crystals

Mirrors

Diffraction

Semiconductors

Semiconductor lasers

Gallium arsenide

Luminescence

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