Radiation Effects On Semiconductor Optical Devices For Space Communications

L. W. Aukerman; Y. Song; F. L. Vernon Jr.; G. A. Evans; J. Z. Wilcox

doi:10.1117/12.933886

23 July 1982 Radiation Effects On Semiconductor Optical Devices For Space Communications

L. W. Aukerman, Y. Song, F. L. Vernon Jr., G. A. Evans, J. Z. Wilcox

Proceedings Volume 0328, Laser and Laser Systems Reliability; (1982) https://doi.org/10.1117/12.933886
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

A survey of the published literature on radiation effects in laser diodes and photodiodes as applied to space communications is presented. Laser diodes should be relatively hard to nuclear environments, especially if operated well above threshold, and should be quite hard to the natural environment. Photodiodes, on the other hand, may experience excess noise due to sustained ionization by Van Allen radiation, especially if this radia-tion is enhanced by a recent nuclear event. Avalanche photodiodes (APDs) are especially sensitive to sustained ionizing dose rate effects. Silicon p-i-n photodiodes are relatively insensitive to neutron damage in contrast to APDs which are considerably more vulnerable. Methods of improving the radiation tolerance of p-i-n photodiodes have been sucessfully implemented by employing double heterostructure junctions. Additional experimental work is needed for improved modeling of these devices.

Citation Download Citation

L. W. Aukerman, Y. Song, F. L. Vernon Jr., G. A. Evans, and J. Z. Wilcox "Radiation Effects On Semiconductor Optical Devices For Space Communications", Proc. SPIE 0328, Laser and Laser Systems Reliability, (23 July 1982); https://doi.org/10.1117/12.933886

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