Comprehensive model of high-power diode laser amplifiers

Zheng Dai

doi:10.1117/12.316656

7 July 1998 Comprehensive model of high-power diode laser amplifiers

Zheng Dai

Proceedings Volume 3283, Physics and Simulation of Optoelectronic Devices VI; (1998) https://doi.org/10.1117/12.316656
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

A comprehensive model is presented to investigate optical, electrical, and thermal behaviors of large-area high-power diode laser amplifiers. The resistor network model describing lateral current confinement is used to define waveguide structures. Spatial variation of current injection is taken into account through junction voltage variations. Hole burnings on gain coefficient and junction voltage are calculated from a 1D carrier diffusion equation. To study thermal lensing, the finite element thermal analysis is integrated into the electric model and the beam propagation method. The described distributed electric/thermal model result in some new explanations in thermal lensing and beam filamentation.

Citation Download Citation

Zheng Dai "Comprehensive model of high-power diode laser amplifiers", Proc. SPIE 3283, Physics and Simulation of Optoelectronic Devices VI, (7 July 1998); https://doi.org/10.1117/12.316656

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