Method to measure ethylene oxide/propylene oxide surfactants in resist developers

Rodica Holt; Joseph E. Oberlander; Maria Fides Y. Calindas; Eleazar Gonzalez; Pilarcita L. Ranque

doi:10.1117/12.312456

29 June 1998 Method to measure ethylene oxide/propylene oxide surfactants in resist developers

Rodica Holt, Joseph E. Oberlander, Maria Fides Y. Calindas, Eleazar Gonzalez, Pilarcita L. Ranque

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312456
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Controlling the exact level of surfactants in resist developers is critical. Surfactant concentrations can influence parameters such as photospeed, resolution, and linearity. Too much or too little surfactant can have a significant impact on the performance of the developer. In our laboratory an analytical procedure was developed to quantitate an Ethylene Oxide/Propylene Oxide (EO/PO) surfactant in an aqueous Tetra Alkyl Ammonium Hydroxide developer. The procedure takes advantage of the chemical property of the EO/PO surfactant to complex with aqueous cobalt thiocyanate solution to form a blue cobalt containing dye. The coupled dye is soluble in methylene chloride and visible at lambda 620 nm. The amount of dye formation is directly proportional to the amount of EO/PO surfactant present in the sample, over an established range. The analytical method provides precise and accurate quantitation of the EO/PO surfactant in the resist developers. It is relatively easy to perform and enables the user to qualify a resist developer with respect to its surfactant content. Also, the method developed is sufficiently general and can be applied to other types of nonionic surfactants presented in resist developers.

Citation Download Citation

Rodica Holt, Joseph E. Oberlander, Maria Fides Y. Calindas, Eleazar Gonzalez, and Pilarcita L. Ranque "Method to measure ethylene oxide/propylene oxide surfactants in resist developers", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312456

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