Detection of deep boron-involved thermal donor formation in silicon by combined photoluminescent, Hall, and ESR techniques

V. M. Babich; Nicolay P. Baran; V. L. Kiritsa; Galina Yu. Rudko

doi:10.1117/12.306229

20 April 1998 Detection of deep boron-involved thermal donor formation in silicon by combined photoluminescent, Hall, and ESR techniques

V. M. Babich, Nicolay P. Baran, V. L. Kiritsa, Galina Yu. Rudko

Author Affiliations +

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306229
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

The low temperature photoluminescence technique applied together with Hall and ESR methods elucidated the variation of boron doping impurity behavior in Si:B under thermal annealing at 450 degree(s)C. It is shown that boron impurity p-Si is involved in the formation of electrically active complexes, namely, deep single-charge thermal donors.

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V. M. Babich, Nicolay P. Baran, V. L. Kiritsa, and Galina Yu. Rudko "Detection of deep boron-involved thermal donor formation in silicon by combined photoluminescent, Hall, and ESR techniques", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306229

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