Short-wavelength infrared HgCdTe photovoltaic detectors fabricated by boron implantation

Jun Zhao; Qin Wang; Jiaxiong Fang

doi:10.1117/12.317631

22 July 1998 Short-wavelength infrared HgCdTe photovoltaic detectors fabricated by boron implantation

Jun Zhao, Qin Wang, Jiaxiong Fang

Proceedings Volume 3379, Infrared Detectors and Focal Plane Arrays V; (1998) https://doi.org/10.1117/12.317631
Event: Aerospace/Defense Sensing and Controls, 1998, Orlando, FL, United States

Abstract

Short wavelength (SWIR) devices have been fabricated using boron implantation. The capacitance-voltage measurement has been used to examine the junction doping profiles. The junction doping profile can be n/n^-/p type or n/p type depending on the p-side doping concentration. Only the junctions made on the lightly doped substrates show the n/n^-/p type abrupt junction, with the n^- region in the low 1 X 10¹⁴ cm^-3 range. On the heavily doped substrates, we obtain the n/p type graded junctions. The peak detectivity D*_(lambda p) performance at room temperature of the large area (A_j equals 5.9 mm²) detector was about 2.6 X 10¹¹ cm-Hz^1/2/W at the zero bias. Higher D*_(lambda p) performance about 1.4 X 10¹² cm-Hz^1/2/W was obtained on smaller area detectors at 250 K.

Citation Download Citation

Jun Zhao, Qin Wang, and Jiaxiong Fang "Short-wavelength infrared HgCdTe photovoltaic detectors fabricated by boron implantation", Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); https://doi.org/10.1117/12.317631

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