Paper
2 July 1998 Degradation effects in pulsed AlGaAs large optical cavity (LOC) structure laser diodes
Rodica V. Ghita, Eugen Vasile, Valerica Cimpoca, N. Baltateanu
Author Affiliations +
Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312670
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania
Abstract
High power pulsed laser diodes are of interest due to their potential use in medicine and peculiar applications. This paper presents failure analysis for catastrophic damage in GaAs/AlGaAs LOC pulsed laser devices. There is presented failure decrease of optical power as 1 g (P/P0) equals f(t) where P0 is initial power, P actual power, t-operating time. The damaged devices were investigated by optical and scanning electron microscopy and there was performed a electron dispersion spectroscopy analysis. These experiments advanced the idea of dividing catastrophic degradation in three types, respectively: 1-catastrophic optical mirror damage, 2-catastrophic damage due to major mechanic defects, 3-catastrophic damage due to metal migration (e.g. Au). There was established an experimental criterion to characterize catastrophic damage.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rodica V. Ghita, Eugen Vasile, Valerica Cimpoca, and N. Baltateanu "Degradation effects in pulsed AlGaAs large optical cavity (LOC) structure laser diodes", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); https://doi.org/10.1117/12.312670
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KEYWORDS
Semiconductor lasers

Mirrors

Gold

Metals

Failure analysis

Lab on a chip

Coating

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