Growth and characterization of B-FeSi2 thin films prepared by laser ablation method

Hirofumi Kakemoto; Yunosuke Makita; Shiro Sakuragi; Y. Show; Tomio Izumi; I. Sakata; Akira Obara; Naoto Kobayashi; Shizutoshi Ando; Takeyo Tsukamoto

doi:10.1117/12.317939

15 August 1998 Growth and characterization of β-FeSi₂ thin films prepared by laser ablation method

Hirofumi Kakemoto, Yunosuke Makita, Shiro Sakuragi, Y. Show, Tomio Izumi, I. Sakata, Akira Obara, Naoto Kobayashi, Shizutoshi Ando, Takeyo Tsukamoto

Author Affiliations +

Proceedings Volume 3550, Laser Processing of Materials and Industrial Applications II; (1998) https://doi.org/10.1117/12.317939
Event: Photonics China '98, 1998, Beijing, China

Abstract

Under ultra high vacuum, (beta) -FeSi₂ thin films were formed by laser ablation method using poly crystal (beta) - FeSi₂ as target material that was prepared by horizontal gradient freeze method. In order to compare the physical properties of thin films prepared by laser ablation with those of bulk crystal, (beta) -FeSi₂ single crystal was prepared by chemical vapor transport method. The (beta) -FeSi₂ plate-like and needle-like crystals were formed at 7 mg and 1.0 g of iodine quantity, respectively. To check a crystal symmetry and orientation, Laue transmission patterns were taken. Anisotropic Raman signals were observed from polarized Raman scattering measurements. Further, electron spin resonance measurement was carried out to examine the residual impurities and to determine g values. From (beta) -FeSi₂ films during laser ablation growth, streaky signals were obtained in the RHEED observation. Highly oriented (202)/(220) (beta) -FeSi₂ films were predominantly identified in XRD measurements. Raman scattering and optical absorption measurements for these layers revealed that the grown samples are nearly epitaxially-like and have approximately 0.85 eV as its direct optical band-gap.

Citation Download Citation

Hirofumi Kakemoto, Yunosuke Makita, Shiro Sakuragi, Y. Show, Tomio Izumi, I. Sakata, Akira Obara, Naoto Kobayashi, Shizutoshi Ando, and Takeyo Tsukamoto "Growth and characterization of β-FeSi₂ thin films prepared by laser ablation method", Proc. SPIE 3550, Laser Processing of Materials and Industrial Applications II, (15 August 1998); https://doi.org/10.1117/12.317939

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available