Electroluminescence and photoluminescence from heavily carbon-doped GaAs

Xingshi Tian; Xian Liu; Yongkang Chen; Shubai Zhou

doi:10.1117/12.318243

14 August 1998 Electroluminescence and photoluminescence from heavily carbon-doped GaAs

Xingshi Tian, Xian Liu, Yongkang Chen, Shubai Zhou

Proceedings Volume 3556, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II; (1998) https://doi.org/10.1117/12.318243
Event: Photonics China '98, 1998, Beijing, China

Abstract

Electroluminescence (EL) and photoluminescence (PL) have been measured from thin layer structures of heavily carbon-doped GaAs film, with order 10²⁰ cm^-3 hole concentration, grown on semi-insulating GaAs substrate by metalorganic molecular beam epitaxy. The EL is detected only when the film contact is biased positively. The EL peak wavelengths at 80 K and 300 K occur at 900 nm and 950 nm respectively. The PL is measured at 3 K, 12 K, 80 K and 300 K, with peak wavelengths at 869.5 nm, 871.4 nm, 875.1 nm and 911.8 nm respectively. The EL spectra indicate that there are heterojunction interface states at about 50 meV below the conduction band. The PL of as-grown sample can be explained by band-to-band recombination in the heavily carbon-doped GaAs, and the PL of annealed sample arises from recombination centers, formed by C_Ga donors, in band gap.

Citation Download Citation

Xingshi Tian, Xian Liu, Yongkang Chen, and Shubai Zhou "Electroluminescence and photoluminescence from heavily carbon-doped GaAs", Proc. SPIE 3556, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II, (14 August 1998); https://doi.org/10.1117/12.318243

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