Porous silicon (por-Si), which is being obtained by electrochemical etching of single crystalline silicon in electrolytes on the base of hydrofluoric acid, recently attracts the attention of specialists in photovoltaics even more due-to a number of its unique properties. However, at present, acceptable results are obtained only for the use of por-Si as antireflection coating for silicon solar cells (SC). In the present paper, previous experience of the use of por-Si in the silicon SC has been analyzed. On the base of examination of the por-Si properties, a number of new directions of improvement of photoconversion efficiency of structures with optimized layers of por-Si was envisaged. The results of numerical calculations carried confirm perspectiveness of use of por-Si for efficiency improvement for different types of silicon SC. These can be increase of their internal quantum output, expansion of operating spectral range toward ultraviolet and infrared spectrum range, decrease of losses of photogenerated power due-to the influence of bulk and surface recombination.
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