Femtosecond spectroscopy in GaN with tunable UV pulses

Hong Ye; Gary W. Wicks; Philippe M. Fauchet

doi:10.1117/12.349294

24 May 1999 Femtosecond spectroscopy in GaN with tunable UV pulses

Hong Ye, Gary W. Wicks, Philippe M. Fauchet

Proceedings Volume 3624, Ultrafast Phenomena in Semiconductors III; (1999) https://doi.org/10.1117/12.349294
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

The hot electron relaxation dynamics is studied in n-type GaN films grown on sapphire by molecular beam epitaxy. A novel femtosecond pump-probe technique is used in which the electrons are excited by an infrared pump and the carrier dynamics are monitored by a tunable near UV probe. Complex transients, showing bleaching and induced absorption, are observed. The data are fitted by a model in which the LO- phonon emission is the dominant energy relaxation process. The LO-phonon emission time is measured to be 0.2 ps. Above- bandgap pump-probe experiments, in which the electrons are excited by a near ultraviolet (UV) pump from the valence band and probed by a tunable near UV pulse are also performed. They show that the carrier dynamics vary with the probe wavelengths.

Citation Download Citation

Hong Ye, Gary W. Wicks, and Philippe M. Fauchet "Femtosecond spectroscopy in GaN with tunable UV pulses", Proc. SPIE 3624, Ultrafast Phenomena in Semiconductors III, (24 May 1999); https://doi.org/10.1117/12.349294

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