Paper
27 April 1999 Analysis of in-situ vibration monitoring for end-point detection of CMP planarization processes
Dale L. Hetherington, David J. Stein, James P. Lauffer, Edward E. Wyckoff, David M. Shingledecker
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Abstract
This paper details the analysis of vibration monitoring for end-point control in oxide CMP processes. Two piezoelectric accelerometers were integrated onto the backside of a stainless steel polishing steel polishing head of an IPEC 472 polisher. One sensor was placed perpendicular to the carrier plate and the other parallel to the plate. Wafers patterned with metal and coated with oxide material were polished at different speeds and pressures. Our results show that it is possible to sense a change in the vibration signal over time during planarization of oxide material on patterned wafers. The horizontal accelerometer showed more sensitivity to change in vibration amplitude compared to the vertical accelerator for a given polish condition. At low carrier and platen rotation rates, the change in vibration signal over time at fixed frequencies decreased approximately 1/2 to 1 order of magnitude. At high rotation speeds, the vibration signal remained essentially constant indicating that other factors dominated the vibration signal. These results show that while it is possible to sense changes in acceleration during polishing, more robust hardware and signal processing algorithms are required to ensure its use over a wide range of process conditions.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dale L. Hetherington, David J. Stein, James P. Lauffer, Edward E. Wyckoff, and David M. Shingledecker "Analysis of in-situ vibration monitoring for end-point detection of CMP planarization processes", Proc. SPIE 3743, In-Line Characterization, Yield Reliability, and Failure Analyses in Microelectronic Manufacturing, (27 April 1999); https://doi.org/10.1117/12.346902
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Cited by 8 scholarly publications.
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KEYWORDS
Polishing

Semiconducting wafers

Chemical mechanical planarization

Signal processing

Oxides

Metals

Sensors

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