Paper
10 June 1999 Noncooled detectors of radiation for the middle range of the IR spectrum based on CdxHg1-xTe
E. K. Gousseynov, F. N. Gasiyev
Author Affiliations +
Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350915
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation
Abstract
The different type design of sensitive elements for photoconducting (PC) and photoelectromagnetic (PEM) infrared detectors for attention have been offered. For uncooled PC and PEM detectors on the base of HgCdTe by the sensing elements as meander-type have been considered. For PC IR- detectors the construction with two-side metallization of the contact areas of the element are represented. These detectors high sensitivity are demonstrated.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. K. Gousseynov and F. N. Gasiyev "Noncooled detectors of radiation for the middle range of the IR spectrum based on CdxHg1-xTe", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350915
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KEYWORDS
Sensors

Chemical elements

Photoresistors

Infrared sensors

Semiconducting wafers

Infrared radiation

Magnetic sensors

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