Abnormal increase of time of oxygen diffusion with oxidation of silicon surface under action of powerful laser pulses

Alexander F. Banishev; Vladimir S. Golubev; Alexei Yu. Kremnev

doi:10.1117/12.377040

7 February 2000 Abnormal increase of time of oxygen diffusion with oxidation of silicon surface under action of powerful laser pulses

Alexander F. Banishev, Vladimir S. Golubev, Alexei Yu. Kremnev

Author Affiliations +

Proceedings Volume 3888, High-Power Lasers in Manufacturing; (2000) https://doi.org/10.1117/12.377040
Event: Advanced High-Power Lasers and Applications, 1999, Osaka, Japan

Abstract

The paper presents an investigation of deformation response of monocrystalline silicon surface to the action of short laser pulses in the air and in vacuum P approximately equals 10^-2 Torr. An anomalously continuous change of the surface relief was identified on irradiation in the air. The observable phenomenon is explained by oxidation of surface layer, enriched with defects.

Citation Download Citation

Alexander F. Banishev, Vladimir S. Golubev, and Alexei Yu. Kremnev "Abnormal increase of time of oxygen diffusion with oxidation of silicon surface under action of powerful laser pulses", Proc. SPIE 3888, High-Power Lasers in Manufacturing, (7 February 2000); https://doi.org/10.1117/12.377040

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