Dry plasma etching of GaAs vias using BCl3/Ar and Cl2/Ar plasmas

Yuwen Chen; Boon Siew Ooi; Geok Ing Ng; Chee Leong Tan; Yuen Chuen Chan

doi:10.1117/12.370307

12 November 1999 Dry plasma etching of GaAs vias using BCl₃/Ar and Cl₂/Ar plasmas

Yuwen Chen, Boon Siew Ooi, Geok Ing Ng, Chee Leong Tan, Yuen Chuen Chan

Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370307
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

We report the development and characterizations of GaAs via hole processes using BCl₃/Ar and Cl₂/Ar plasmas generated by an electron cyclotron resonance (ECR) system. The effect of the in- and out-diffuse of the reactive species and etch by-products, of the BCl₃/Ar plasma, on the etch rate of the GaAs vias has been studied. The average GaAs etch rate was found to increase with increasing of both BCl₃ and Cl₂ flow rates. Under similar conditions, namely 800W microwave power, 150W RF power, 10sccm Ar flow rate, same flow rate, the etch rates of Cl₂/Ar plasma were found to be 7-16 times higher than those of BCl₃/Ar plasma. As the microwave power increased from 0 to 1500W, the etch rate increased by a factor of as large as 124 for the Cl₂/Ar process. Etch rate as high as 6.7micrometers /min was observed from sample etched in Cl₂/Ar plasma using a microwave power, RF power and process pressure of 800W, 150W and 50mTorr, respectively. Compared to the BCl₃/Ar plasma, Cl₂/Ar plasma is a better candidate, as this process gives higher etch rate and smoother etched surface.

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Yuwen Chen, Boon Siew Ooi, Geok Ing Ng, Chee Leong Tan, and Yuen Chuen Chan "Dry plasma etching of GaAs vias using BCl₃/Ar and Cl₂/Ar plasmas", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370307

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KEYWORDS

Etching

Gallium arsenide

Plasma

Microwave radiation

Argon

Plasma etching

Chlorine

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