Paper
9 November 1999 Aligned In0.5Ga0.5As quantum dots on laser-patterned GaAs substrate
SeKi Park, C. K. Hyon, Byung Don Min, Hyo Jin Kim, Sung Min Hwang, Eun Kyu Kim, Hong Kyu Lee, Cheon Lee, Yong-Gi Kim
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Abstract
It has been studied the selective InGaAs quantum dots growth on laser-patterned GaAs substrate by atmospheric pressure metal organic chemical vapor deposition. We have patterned the samples below etching threshold power density 8.84 MW/cm2 by argon ion laser. The depth and lateral size of the pattern are about 8 nm and 100 nm, respectively. The QDs were grown on AlGaAs matrix.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
SeKi Park, C. K. Hyon, Byung Don Min, Hyo Jin Kim, Sung Min Hwang, Eun Kyu Kim, Hong Kyu Lee, Cheon Lee, and Yong-Gi Kim "Aligned In0.5Ga0.5As quantum dots on laser-patterned GaAs substrate", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); https://doi.org/10.1117/12.369430
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KEYWORDS
Gallium arsenide

Etching

Indium gallium arsenide

Quantum dots

Atomic force microscopy

Laser damage threshold

Laser irradiation

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