Exposure Characteristics Of Electron Beam Resists For Synchrotron X-Ray Lithography

Takeshi Kimura; Kozo Mochiji; Norikazu Tsumita; Hidehito Obayashi; Akira Mikuni

doi:10.1117/12.935087

7 November 1983 Exposure Characteristics Of Electron Beam Resists For Synchrotron X-Ray Lithography

Takeshi Kimura, Kozo Mochiji, Norikazu Tsumita, Hidehito Obayashi, Akira Mikuni

Proceedings Volume 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II; (1983) https://doi.org/10.1117/12.935087
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

The exposure characteristics of various electron resists are dependent upon the synchrotron acceleration energy (0.4-1.0 GeV). At higher acceleration energies, the exposure time necessary to develop the whole resist layer becomes shorter, and resist' -value increases. The order of resist sensitivities subjected to synchrotron X-ray (1 GeV) remains the same as that subjected to electron beam. Due to high collimation in synchrotron X-ray, high aspect-ratio (0.2-0.5 μm wide and 3 μm thick) resist patterns can easily be replicated with a larger clearance between mask and wafer. N-MOS transistors were fabricated employing a 4-level X-ray lithography process. The difference between the threshold voltages for transistors fabricated using X-ray and optical lithographies is in the error range between wafers.

Citation Download Citation

Takeshi Kimura, Kozo Mochiji, Norikazu Tsumita, Hidehito Obayashi, and Akira Mikuni "Exposure Characteristics Of Electron Beam Resists For Synchrotron X-Ray Lithography", Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); https://doi.org/10.1117/12.935087

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