Analysis of laser ablation process in semiconductor due to ultrashort-pulsed laser with molecular dynamics simulation

Koji Watanabe; Yuri Ishizaka; Etsuji Ohmura; Isamu Miyamoto

doi:10.1117/12.387594

7 June 2000 Analysis of laser ablation process in semiconductor due to ultrashort-pulsed laser with molecular dynamics simulation

Koji Watanabe, Yuri Ishizaka, Etsuji Ohmura, Isamu Miyamoto

Author Affiliations +

Proceedings Volume 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V; (2000) https://doi.org/10.1117/12.387594
Event: Symposium on High-Power Lasers and Applications, 2000, San Jose, CA, United States

Abstract

Rapid fusion and evaporation phenomena of silicon with ultrafast laser irradiation were simulated using the 3D molecular dynamics. Surface structure dependence of laser shock phenomena, fusion and evaporation process was examined for the Si(100) and Si(111) surface structures. It was shown that the crystal orientation influences the propagation velocity of shock wave and that heat conduction but laser absorption in the materials, that is, absorption coefficient affects the fusion depth when the pulse width is subpicosecond.

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Koji Watanabe, Yuri Ishizaka, Etsuji Ohmura, and Isamu Miyamoto "Analysis of laser ablation process in semiconductor due to ultrashort-pulsed laser with molecular dynamics simulation", Proc. SPIE 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V, (7 June 2000); https://doi.org/10.1117/12.387594

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