Design of InGaN/GaN/AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical simulation

Marek Osinski; Vladimir A. Smagley; Chunsheng Fu; Gennady A. Smolyakov; Petr Georgievich Eliseev

doi:10.1117/12.391440

14 July 2000 Design of InGaN/GaN/AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical simulation

Marek Osinski, Vladimir A. Smagley, Chunsheng Fu, Gennady A. Smolyakov, Petr Georgievich Eliseev

Author Affiliations +

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391440
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Three-dimensional electric-thermal-optical numerical simulator is developed and applied to model group-III-nitride-based intracavity-contacted vertical-cavity surface-emitting lasers (VCSELs) with InGaN multi-quantum-well active region. The optical model based on the effective frequency method is combined with electrical-thermal simulator using the control volume method. Isothermal (pulsed regime imitation) and CW modes of operation are calculated over a range of voltages, covering sub-threshold spontaneous emission and lasing emission. Effects of current crowding at the active-region periphery are examined, and in particular an impact on mode profiles of spatial hole burning superimposed on nonuniform gain distribution is studied. In order to reduce the current crowding and provide more uniform gain distribution within the active region, a semitransparent p-side contact design is proposed.

Citation Download Citation

Marek Osinski, Vladimir A. Smagley, Chunsheng Fu, Gennady A. Smolyakov, and Petr Georgievich Eliseev "Design of InGaN/GaN/AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical simulation", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391440

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