Second harmonic generation from the Si/SiO2 interface

Steven T. Cundiff; Tara Michele Fortier

doi:10.1117/12.391472

14 July 2000 Second harmonic generation from the Si/SiO₂ interface

Steven T. Cundiff, Tara Michele Fortier

Proceedings Volume 3944, Physics and Simulation of Optoelectronic Devices VIII; (2000) https://doi.org/10.1117/12.391472
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

Optical second harmonic generation is very sensitive to surfaces or interfaces if the bulk material is inversion symmetric. We present the results of second harmonic studies of the interface between silicon and silicon dioxide. Previous results have shown that the technique is sensitive to roughness at this interface. To develop a further understanding of why roughness influences second harmonic generation, we investigate the dependence of the second harmonic on the photon energy of the incident pulses. Measurements are made on a series of samples, with varying vicinal angles, in order to determine what role miscut and step edges play.

Citation Download Citation

Steven T. Cundiff and Tara Michele Fortier "Second harmonic generation from the Si/SiO₂ interface", Proc. SPIE 3944, Physics and Simulation of Optoelectronic Devices VIII, (14 July 2000); https://doi.org/10.1117/12.391472

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