Experimental validation of a thermal model used to predict the image placement error of a scanned EUVL reticle

Steven E. Gianoulakis; Marcus J. Craig; Avijit K. Ray-Chaudhuri

doi:10.1117/12.390035

21 July 2000 Experimental validation of a thermal model used to predict the image placement error of a scanned EUVL reticle

Steven E. Gianoulakis, Marcus J. Craig, Avijit K. Ray-Chaudhuri

Author Affiliations +

Proceedings Volume 3997, Emerging Lithographic Technologies IV; (2000) https://doi.org/10.1117/12.390035
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Lithographic masks must maintain dimensional stability during exposure in a lithographic tool to minimize subsequent overlay errors. In extreme ultraviolet lithography (EUVL), multilayer coatings are deposited on a mask substrate to make the mask surface reflective at EUV wavelengths. About 40% of the incident EUV light is absorbed by the multilayer coating which leads to a temperature rise. The choice of mask substrate material and absorber affects the magnitude of thermal distortion. Finite element modeling has been used to investigate potential mask materials and to explore the efficiency of various thermal management strategies. An experimental program was conducted to validate the thermal models used to predict the performance of EUV reticles. The experiments closely resembled actual conditions expected within the EUV tool. A reticle instrumented with temperature sensors was mounted on a scanning stage with an electrostatic chuck. An actively cooled isolation plate was mounted in front of the reticle for thermal management. Experimental power levels at the reticle corresponding to production throughput levels were utilized in the experiments. Both silicon and low expansion glass reticles were tested. Temperatures were measured a several locations on the reticle and tracked over time as the illuminated reticle was scanned. The experimental results coupled with the predictive modeling capability validates that the assertion that the use of a low expansion glass will satisfy image placement error requirements down to the 30 nm lithographic node.

Citation Download Citation

Steven E. Gianoulakis, Marcus J. Craig, and Avijit K. Ray-Chaudhuri "Experimental validation of a thermal model used to predict the image placement error of a scanned EUVL reticle", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390035

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available