Phase-mask effects by dark-field lithography

Donald L. White; Raymond A. Cirelli; Steven J. Spector; Myrtle I. Blakey; Obert R. Wood II

doi:10.1117/12.389026

5 July 2000 Phase-mask effects by dark-field lithography

Donald L. White, Raymond A. Cirelli, Steven J. Spector, Myrtle I. Blakey, Obert R. Wood II

Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389026
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

A new resolution enhancement technique for photolithography that makes use of dark-field (DF) illumination was recently reported. In a DF projector, light from the condenser illuminates the reticle at such a steep angle that zero order light is lost from the system. The mask for a DF projector contains a series of sub-resolution gratings that diffract light into the lens and define features so be printed on the wafer. These sub-resolution gratings can be employed to precisely control the amplitude, phase and direction of light diffracted from each point on the mask. Given such precise control, many effect is can be produced with DF lithography that are not possible with enhanced optical lithography, e.g., terminating lines and resolving phase conflicts.

Citation Download Citation

Donald L. White, Raymond A. Cirelli, Steven J. Spector, Myrtle I. Blakey, and Obert R. Wood II "Phase-mask effects by dark-field lithography", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389026

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