Synthesis of metal-nitride films by pulsed laser deposition methods

L. Fabian; Laszlo Nanai; Maurizio Martino; Armando Luches; Ion N. Mihailescu

doi:10.1117/12.378174

25 February 2000 Synthesis of metal-nitride films by pulsed laser deposition methods

L. Fabian, Laszlo Nanai, Maurizio Martino, Armando Luches, Ion N. Mihailescu

Proceedings Volume 4070, ALT '99 International Conference on Advanced Laser Technologies; (2000) https://doi.org/10.1117/12.378174
Event: ALT'99 International Conference: Advanced Laser Technologies, 1999, Potenza-Lecce, Italy

Abstract

Pulsed laser deposition method (PLD) is widely used nowadays to produce smooth, homogeneous thin films on solid surfaces for microelectronic's purpose. Different metal-nitride films as well as nitrides of W, V, Ta, Ni, Co, Pb have been produced in NH₃ and N₂ atmosphere of a few on Si surfaces with orientation. In the reaction chamber the pulses of excimer laser at fluence of 5.8 J/cm² were directed at angle of incidence of 45 degrees to the metallic sheet placed at distance 4.0 cm to the Si substrate. The metallic target was rotated at approximately 3 Hz. Different surface analyzing methods revealed that smooth, homogeneous thin films of the thickness of 20-100 nm were grown on the substrate surface. The chemical composition of the layers varied of metal-silicides to metal-nitrides. In some cases the appearance of carbon and oxygen consisting mixtures such as VNCO, N₁₃Si₉O_1.5C₆ and WN were observed. The film structures might be considered mostly amorphous according to the data of GR-XRD measurements.

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L. Fabian, Laszlo Nanai, Maurizio Martino, Armando Luches, and Ion N. Mihailescu "Synthesis of metal-nitride films by pulsed laser deposition methods", Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); https://doi.org/10.1117/12.378174

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KEYWORDS

Silicon

Pulsed laser deposition

Lead

Tantalum

Thin films

Nickel

Atomic force microscopy

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