Paper
29 November 2000 Influence of Cd diffusion on the structure and photoluminescence of CdSe/ZnSe multiple quantum wells
Yuxue Liu, De Zen Shen, Yichun Liu, Jiying Zhang, Xianggui Kong, Xiwu Fan
Author Affiliations +
Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408424
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China
Abstract
In this paper, we have fabricated a 20 period CdSe/ZnSe MQW's on (001) orientated GaAs grown by metalorganic chemical vapor deposition under se-rich condition at the growth temperature of 500 degree(s)C. CdSe/ZnSe MQW's structure was characterized by means of x-ray diffraction and Raman scattering. These experimental results indicated the formation of new Cd1-xZnxSe layers and the existence of Cd and Zn vacancies in CdSe/ZnSe MQW's. The photoluminescence spectra of CdSe/ZnSe MQW's at low temperature was composed of a very strong and narrow band A at 2.4 eV and a weak and broadened band B at 2 eV. In order to understand the influence of Cd diffusion on the structure and photoluminescence (PL) of CdSe/ZnSe multiple quantum wells (MQW's), a new model of Cd diffusion in CdSe/ZnSe MQW's was given. Based on the simulation of Cd diffusion in CdSe/ZnSe MQW's and the calculation of the envelop-function approximation, the origin of PL of CdSe/ZnSe MQW's was discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuxue Liu, De Zen Shen, Yichun Liu, Jiying Zhang, Xianggui Kong, and Xiwu Fan "Influence of Cd diffusion on the structure and photoluminescence of CdSe/ZnSe multiple quantum wells", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408424
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KEYWORDS
Cadmium

Diffusion

Raman spectroscopy

Quantum wells

X-ray diffraction

Luminescence

Raman scattering

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