Measuring thicknesses of native oxide, crystalline-silicon, and buried oxide layers and the interface roughnesses of SOI

Iris Bloomer; George G. Li; A. Rahim Forouhi; A. Auberton-Herve; Andrew Wittkower

doi:10.1117/12.395734

18 August 2000 Measuring thicknesses of native oxide, crystalline-silicon, and buried oxide layers and the interface roughnesses of SOI

Iris Bloomer, George G. Li, A. Rahim Forouhi, A. Auberton-Herve, Andrew Wittkower

Author Affiliations +

Proceedings Volume 4181, Challenges in Process Integration and Device Technology; (2000) https://doi.org/10.1117/12.395734
Event: Microelectronic Manufacturing, 2000, Santa Clara, CA, United States

Abstract

In this paper we describe a non-destructive technique that characterizes Silicon-On-Insulator (SOI) wafers. With this technique, the thickness of the crystalline silicon and BOX layers, as well as the thickness of the native oxide that naturally forms on SOI are determined. Additionally the degree of smoothness of SOI interfaces are measured. The spectra of optical constant, n and k, of the BOX are also determined. The thicknesses, n and k spectra, and interface roughness are determined simultaneously by analyzing broad-band reflectance with the Forouhi-Bloomer equations for n and k. The reflectance measurement is based on all-reflective optics to generale a highest possible signal-to-noise ratio over the entire measured wavelength range. The total measurement time is about 1 second. We show that the result obtained with the present technique are in excellent agreement with cross-section TEM.

Citation Download Citation

Iris Bloomer, George G. Li, A. Rahim Forouhi, A. Auberton-Herve, and Andrew Wittkower "Measuring thicknesses of native oxide, crystalline-silicon, and buried oxide layers and the interface roughnesses of SOI", Proc. SPIE 4181, Challenges in Process Integration and Device Technology, (18 August 2000); https://doi.org/10.1117/12.395734

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