Numerical simulation of photoelectric characteristic of three-channel bulk charge-coupled device in the x-ray region

Min Song; Yuxin Wang

doi:10.1117/12.401764

5 October 2000 Numerical simulation of photoelectric characteristic of three-channel bulk charge-coupled device in the x-ray region

Min Song, Yuxin Wang

Author Affiliations +

Proceedings Volume 4223, Instruments for Optics and Optoelectronic Inspection and Control; (2000) https://doi.org/10.1117/12.401764
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China

Abstract

In this paper the photoelectric characteristics of the three-channel bulk charge-coupled device (BCCD) was simulated in the region of x-ray. The results show that the silicon three-channel BCCD can not work in the region of x- ray because of improper absorption coefficient of silicon. The absorption coefficient curve of a new material is given in this paper. By using the absorption coefficient of the new material, three maxim positions of the spectral photosensitivity are obtained at 1.8kev, 1.2kev and 0.6kev, respectively.

Citation Download Citation

Min Song and Yuxin Wang "Numerical simulation of photoelectric characteristic of three-channel bulk charge-coupled device in the x-ray region", Proc. SPIE 4223, Instruments for Optics and Optoelectronic Inspection and Control, (5 October 2000); https://doi.org/10.1117/12.401764

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