Surface-potential-based model of reverse short-channel effect in submicrometer MOSFETs with nonuniform lateral channel doping

Wensheng Qian; Xing Zhou; Yuwen Wang; Khee Yong Lim

doi:10.1117/12.405420

24 October 2000 Surface-potential-based model of reverse short-channel effect in submicrometer MOSFETs with nonuniform lateral channel doping

Wensheng Qian, Xing Zhou, Yuwen Wang, Khee Yong Lim

Author Affiliations +

Proceedings Volume 4228, Design, Modeling, and Simulation in Microelectronics; (2000) https://doi.org/10.1117/12.405420
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

In this paper, a consine-like function instead of a box or a Gaussian-like function is constructed as the pile-up doping in device channel near LDD. The surface potential distribution of nonuniform doping channel is obtained by using Gauss' Law. Threshold voltage roll-up is observed, which is due to the pile-up doping. The simulation results are verified by MEDICI numerical data.

Citation Download Citation

Wensheng Qian, Xing Zhou, Yuwen Wang, and Khee Yong Lim "Surface-potential-based model of reverse short-channel effect in submicrometer MOSFETs with nonuniform lateral channel doping", Proc. SPIE 4228, Design, Modeling, and Simulation in Microelectronics, (24 October 2000); https://doi.org/10.1117/12.405420

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