Growth and optoelectronic properties of III-nitride quaternary alloys

Jing Li; Ki-Bum Nam; KyoungHoon Kim; Tom Nelson Oder; H. J. Jun; Jing Yu Lin; Hongxing Jiang

doi:10.1117/12.424740

23 April 2001 Growth and optoelectronic properties of III-nitride quaternary alloys

Jing Li, Ki-Bum Nam, KyoungHoon Kim, Tom Nelson Oder, H. J. Jun, Jing Yu Lin, Hongxing Jiang

Proceedings Volume 4280, Ultrafast Phenomena in Semiconductors V; (2001) https://doi.org/10.1117/12.424740
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

In_xAl_yGa_1-xN quaternary alloys with different In and Al composites were grown on sapphire substrates with GaN buffer by metal-organic chemical vapor deposition. Optical properties of these quaternary alloys were studied by picosecond time-resolved photoluminescence. Our studies have revealed that In_xAl_yGa_1-xN quaternary alloys with lattice matched with GaN (y approximately 4.7x) have the highest optical quality. More importantly, we can achieve not only higher emission energies but also higher emission intensities (or quantum efficiencies) in In_xAl_yGa_1-x-yN quaternary alloys than that of GaN.

Citation Download Citation

Jing Li, Ki-Bum Nam, KyoungHoon Kim, Tom Nelson Oder, H. J. Jun, Jing Yu Lin, and Hongxing Jiang "Growth and optoelectronic properties of III-nitride quaternary alloys", Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); https://doi.org/10.1117/12.424740

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