Comparison of different source concepts for EUVL

Rainer Lebert; Klaus Bergmann; Larissa Juschkin; Oliver Rosier; Willi Neff

doi:10.1117/12.436650

20 August 2001 Comparison of different source concepts for EUVL

Rainer Lebert, Klaus Bergmann, Larissa Juschkin, Oliver Rosier, Willi Neff

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Proceedings Volume 4343, Emerging Lithographic Technologies V; (2001) https://doi.org/10.1117/12.436650
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

There are some candidates discussed as potential high power EUV sources for EUV lithography. Laser produced and discharge produced plasmas are most promising. In principle, the most efficient steady state plasma can be well defined with respect to plasma temperature and density. However, the conversion efficiency of a practical EUV source is mainly determined by the efficiency of plasma generation and heating and by the dynamics during the emitting phase. The different approaches to achieve the most efficient EUV source imply different heating mechanisms, different plasma geometries, different plasma densities and different time scales. Moreover, each approach has individual technical aspects that influence the efficiency and the technical chances of realization. A general approach for comparing different EUV source concepts is presented based on a discussion of fundamental aspects of the plasma generation and based on technical issues.

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Rainer Lebert, Klaus Bergmann, Larissa Juschkin, Oliver Rosier, and Willi Neff "Comparison of different source concepts for EUVL", Proc. SPIE 4343, Emerging Lithographic Technologies V, (20 August 2001); https://doi.org/10.1117/12.436650

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