Effect of development process time on the surface of photoresist with various chemical compositions investigated by atomic force microscopy

Chang Hyun Ko; Seok-Hwan Oh; Jae-Hwan Kim; Chang-Lyong Song; Sang-In Lee

doi:10.1117/12.436875

24 August 2001 Effect of development process time on the surface of photoresist with various chemical compositions investigated by atomic force microscopy

Chang Hyun Ko, Seok-Hwan Oh, Jae-Hwan Kim, Chang-Lyong Song, Sang-In Lee

Author Affiliations +

Proceedings Volume 4345, Advances in Resist Technology and Processing XVIII; (2001) https://doi.org/10.1117/12.436875
Event: 26th Annual International Symposium on Microlithography, 2001, Santa Clara, CA, United States

Abstract

Understanding the nature of photo-resist (PR) dissolution during the development process is the important factor to accomplish high-precision critical dimension (CD) control in photolithography. In this report, we investigate the effect of each process variable on the PR pattern CD size and surface roughness by scanning electron microscopy (SEM) and atomic force microscopy (AFM). From these experiments, we found out that the major factor to affect the CD and surface roughness control was the puddle time. On the basis of these result, we investigated the relationship between puddle time and chemical compositions of PR. According to the puddle time, top surface of PR became rougher, but finally converged to some value. As the molecular weight and protecting ratio of the PR increased, the degree of surface roughness of the PR increased. Soft bake temperature, which is one of the variables in PR coating process, also affected the surface roughness of the PR. These results must be useful data for the optimization of new developing recipe for the new PR systems which will achieve next generation photolithography.

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Chang Hyun Ko, Seok-Hwan Oh, Jae-Hwan Kim, Chang-Lyong Song, and Sang-In Lee "Effect of development process time on the surface of photoresist with various chemical compositions investigated by atomic force microscopy", Proc. SPIE 4345, Advances in Resist Technology and Processing XVIII, (24 August 2001); https://doi.org/10.1117/12.436875

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KEYWORDS

Surface roughness

Critical dimension metrology

Atomic force microscopy

Optical lithography

Semiconducting wafers

Scanning electron microscopy

Line edge roughness

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