High-brightness diode lasers with high d/gamma ratio obtained in asymmetric epitaxial strutures

Iulian B. Petrescu-Prahova; Thomas Moritz; John Riordan

doi:10.1117/12.467935

22 May 2002 High-brightness diode lasers with high d/Γ ratio obtained in asymmetric epitaxial strutures

Iulian B. Petrescu-Prahova, Thomas Moritz, John Riordan

Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002) https://doi.org/10.1117/12.467935
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

High d/G allows high total emitted power and avoids high power density in the active QW layer where power induced degradation processes occur. d/G is scaled up to 0.84 micrometers in a series of four 7 nm thick single QW AlGaAs structures, designed for 810 nm wavelength. Two structures have an asymmetric design that includes an optical trap next to the active region. The optical trap captures a part of the total radiation flux and reduces the confinement factor. One of asymmetrical structures includes an optical wall built into the p cladding layer that further pushes the radiation flux toward the trap. Device lengths are inversely proportional to the confinement factor; therefore all lasers optimally operate at the same current density. All have approximately the same threshold current density equal to 250 A/cm². For the 0.84 micrometers d/G case, the nominal length is 2.8 mm, the attenuation coefficient is 0.7 cm^-1 and the slope efficiency is 0.96 W/A. The thermal rollover maximum power is greater than 8 W/100micrometers .

Citation Download Citation

Iulian B. Petrescu-Prahova, Thomas Moritz, and John Riordan "High-brightness diode lasers with high d/Γ ratio obtained in asymmetric epitaxial strutures", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); https://doi.org/10.1117/12.467935

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