Effect of Developer Composition on Photoresist Performance

William D. Hinsberg; Monica L. Gutierrez

doi:10.1117/12.941777

21 May 1984 Effect of Developer Composition on Photoresist Performance

William D. Hinsberg, Monica L. Gutierrez

Proceedings Volume 0469, Advances in Resist Technology I; (1984) https://doi.org/10.1117/12.941777
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

A series of experiments have been carried out to define how developer composition affects the performance of a positive photoresist. The relations between resist dissolution rates and the concentrations of sodium ion, hydroxide ion and buffer ions have been examined. An equation that relates the dissolution rate of unexposed photoresist to the concentration of sodium ion and hydroxide ion has been derived. The major compositions of several commercial developers are described. The lithographic performance of resist processed in these developers has been compared by use of characteristic curves. There is little difference in resist performance observed in the different developers when compared under equivalent conditions.

Citation Download Citation

William D. Hinsberg and Monica L. Gutierrez "Effect of Developer Composition on Photoresist Performance", Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); https://doi.org/10.1117/12.941777

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