Characterization of 1.3-um wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low temperature and high pressure

Alfred R. Adams; Robin Fehse; Stanko Tomic; Eoin P. O'Reilly; Aleksey D. Andreev; Gareth Knowles; Terry E. Sale; Stephen J. Sweeney; Gunther Steinle; A. Ramakrishnan; Henning Riechert

doi:10.1117/12.481002

29 August 2002 Characterization of 1.3-um wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low temperature and high pressure

Alfred R. Adams, Robin Fehse, Stanko Tomic, Eoin P. O'Reilly, Aleksey D. Andreev, Gareth Knowles, Terry E. Sale, Stephen J. Sweeney, Gunther Steinle, A. Ramakrishnan, Henning Riechert

Author Affiliations +

Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.481002
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China

Abstract

By measuring the spontaneous emission from normally operating ~1.3um GaInNAs/GaAs-based lasers grown by MBE and by MOVPE we have quantitatively determined the variation of monomolecular (defect-related ~An), radiative (~Bn2) and Auger recombination (~Cn3) as a function of temperature from 130K to 370K. We find that A, B and C are remarkably independent of the growth method. Theoretical calculations of the threshold carrier density as a function of temperature were also performed using a 10 band k·p Hamiltonian from which we could determine the temperature variation of A, B and C. At 300K, A=11x10-8 sec-1, B=8x10-11 cm3 sec-1 and C= 6x10-29 cm6 sec-1. These are compared with theoretical calculations of the coefficients and good agreement is obtained. Our results suggest that by eliminating defect-related currents and reducing optical losses, the threshold current density of these GaInNAs/GaAs-based edge-emitting devices would be more than halved at room temperature. The results from studies of temperature and pressure variation of ~1.3um VCSELs produced by similar MBE growth could also be explained using the same recombination coefficients. They showed a broad gain spectrum and were able to operate over a wide temperature range.

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Alfred R. Adams, Robin Fehse, Stanko Tomic, Eoin P. O'Reilly, Aleksey D. Andreev, Gareth Knowles, Terry E. Sale, Stephen J. Sweeney, Gunther Steinle, A. Ramakrishnan, and Henning Riechert "Characterization of 1.3-um wavelength GaInNAs/GaAs edge-emitting and vertical-cavity surface-emitting lasers using low temperature and high pressure", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.481002

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KEYWORDS

Vertical cavity surface emitting lasers

Temperature metrology

Laser damage threshold

Quantum wells

Gallium arsenide

Nitrogen

Solids

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