Paper
25 July 2003 Recent advances in long-wavelength GaAs-based quantum dot lasers
Nikolai N. Ledentsov, Dieter Bimberg, Roman Sellin, C. Ribbat, Victor M. Ustinov, Alexey E. Zhukov, Alexey R. Kovsh, Mikhail V. Maximov, Yuri M. Shernyakov
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Abstract
1.3 μm GaAs-based quantum dot (QD) lasers demonstrate parameters improved over InP-based devices. They exhibit lower threshold current densities and losses, higher differential efficiencies and improved temerature stability. Highspeed operation is demonstrated. Reduced linewidth enhancement factor advantageous for low-chirp operation makes it possible to suppress dramatically filamentation effects destroying lateral far-field pattern. GaAs-based QD 1.3 μm VCSEL with 8 μm oxide aperture wavelength emits up to 1.2 mW CW multimode.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nikolai N. Ledentsov, Dieter Bimberg, Roman Sellin, C. Ribbat, Victor M. Ustinov, Alexey E. Zhukov, Alexey R. Kovsh, Mikhail V. Maximov, and Yuri M. Shernyakov "Recent advances in long-wavelength GaAs-based quantum dot lasers", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); https://doi.org/10.1117/12.474390
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KEYWORDS
Vertical cavity surface emitting lasers

Gallium arsenide

Quantum dots

Semiconductors

Quantum wells

Indium arsenide

Gallium

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