Paper
3 July 2003 Ultraviolet nitride LED fabrication for high-flux white LED
Hari S. Venugopalan, Anthony DiCarlo, Xiang Gao, Sebastien Libon, Bryan S. Shelton, Emil Stefanov, Tingting Zhang, Ivan Eliashevich, Stan E. Weaver, Michael Hsing, Boris Kolodin, Tom Soules, Doru Florescu, Shiping Guo, Milan Pophristic, Boris Peres
Author Affiliations +
Abstract
The requirements for maximizing the external quantum efficiency of UV nitride LEDs are discussed. It is shown that as the chip wavelength progressively decreases, nitride epi growth on a sapphire substrate becomes advantageous in terms of light extraction. The epilayer requirements for UV LEDs dictate the growth of n-AlGaN, with increasing Al contents, and the growth of UV-transparent p-GaN. It is shown that MOCVD growth in a Emcore D-180 or Ganzilla reactor is ideal for meeting the stringent epilayer requirements. Increasing light extraction efficiency and wall-plug efficiency also requires optimization of the reflecting P-contact. The relative merits of Al- and Ag-based reflecting contacts are discussed. Performance data for UV LEDs on sapphire, for drive currents up to 700 mA is shown. Finally, a practical high power UV-based white lamp is demonstrated.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hari S. Venugopalan, Anthony DiCarlo, Xiang Gao, Sebastien Libon, Bryan S. Shelton, Emil Stefanov, Tingting Zhang, Ivan Eliashevich, Stan E. Weaver, Michael Hsing, Boris Kolodin, Tom Soules, Doru Florescu, Shiping Guo, Milan Pophristic, and Boris Peres "Ultraviolet nitride LED fabrication for high-flux white LED", Proc. SPIE 4996, Light-Emitting Diodes: Research, Manufacturing, and Applications VII, (3 July 2003); https://doi.org/10.1117/12.486359
Lens.org Logo
CITATIONS
Cited by 14 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Light emitting diodes

Ultraviolet radiation

Lamps

Sapphire

Ultraviolet light emitting diodes

Aluminum

Silicon carbide

RELATED CONTENT

Ni Ag as low resistive ohmic contact to p type...
Proceedings of SPIE (February 11 2010)
Progress in III-nitride-based white light sources
Proceedings of SPIE (November 26 2002)
III N multiple quantum wells based 285 to 340...
Proceedings of SPIE (July 03 2003)
Fabrication of high-lumen InGaN flip chip LEDs
Proceedings of SPIE (January 26 2004)

Back to Top