Gateable spin memory in InP quantum dots

I. A. Yugova; I. V. Ignatiev; S. Yu. Verbin; I. Ya Gerlovin; V. K. Kalevich; A. Yu Shiryaev; Kirill V. Kavokin; Yasuaki Masumoto

doi:10.1117/12.514458

11 June 2003 Gateable spin memory in InP quantum dots

I. A. Yugova, I. V. Ignatiev, S. Yu. Verbin, I. Ya Gerlovin, V. K. Kalevich, A. Yu Shiryaev, Kirill V. Kavokin, Yasuaki Masumoto

Author Affiliations +

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514458
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

In photoluminescence kinetics of the InP quantum dots, we have found a long-lived component of the degree of circular polarization, showing practically no decay during the lifetime of excitation. It is shown that this effect is observed only in the charged quantum dots. The amplitude of the long-lived PL polarization can be controlled by an applied electric field and may be as high as 50% in the case of quasi resonance excitation. The existence of the long-lived component of the polarization is the clear evidence of large lifetime of the electron spin polarization in quantum dots.

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I. A. Yugova, I. V. Ignatiev, S. Yu. Verbin, I. Ya Gerlovin, V. K. Kalevich, A. Yu Shiryaev, Kirill V. Kavokin, and Yasuaki Masumoto "Gateable spin memory in InP quantum dots", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514458

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