Hopping conductivity and magnetic-field-induced quantum hall-insulator transition in InAs/GaAs quantum dot layers

Vladimir A. Kulbachinskii; R. A. Lunin; V. A. Rogozin; A. V. Golikov; V. G. Kytin; B. N. Zvonkov; S. M. Nekorkin; D. O. Filatov; A. de Visser

doi:10.1117/12.514523

11 June 2003 Hopping conductivity and magnetic-field-induced quantum hall-insulator transition in InAs/GaAs quantum dot layers

Vladimir A. Kulbachinskii, R. A. Lunin, V. A. Rogozin, A. V. Golikov, V. G. Kytin, B. N. Zvonkov, S. M. Nekorkin, D. O. Filatov, A. de Visser

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Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.514523
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

We have investigated the temperature dependence of resistance in the temperature range T = 0.07 - 300 K, the quantum Hall effect (qHe) and the Shubnikov-de Haas (SdH) effect in InAs/GaAs quantum dot structures in magnetic field up to 35 T. Two-dimensional Mott variable range hopping conductivity (VRHC) has been observed at low temperatures in samples with low carrier concentration. The length of localization correlates very well with the quantum dot cluster size obtained by Atomic Force Microscope (AFM). In samples with relatively high carrier concentration the transition qHe-insulator was observed.

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Vladimir A. Kulbachinskii, R. A. Lunin, V. A. Rogozin, A. V. Golikov, V. G. Kytin, B. N. Zvonkov, S. M. Nekorkin, D. O. Filatov, and A. de Visser "Hopping conductivity and magnetic-field-induced quantum hall-insulator transition in InAs/GaAs quantum dot layers", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514523

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KEYWORDS

Quantum dots

Gallium arsenide

Magnetism

Temperature metrology

Atomic force microscopy

Resistance

Etching

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