Paper
11 June 2003 Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices
V. Yu. Davydov, A. N. Smirnov, I. N. Goncharuk, R. N. Kyutt, M. P. Scheglov, M. V. Baidakova, W. V. Lundin, E. E. Zavarin, M. B. Smirnov, S. V. Karpov, H. Harima
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Abstract
It is shown that such parameters of GaN/AlxGa1-xN superlattice as the period, build-in strain, composition of the alloy, and individual layer thicknesses can be extracted from the energy positions, intensities, and line shapes of various optical and acoustical modes detected in Raman scattering.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Yu. Davydov, A. N. Smirnov, I. N. Goncharuk, R. N. Kyutt, M. P. Scheglov, M. V. Baidakova, W. V. Lundin, E. E. Zavarin, M. B. Smirnov, S. V. Karpov, and H. Harima "Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.511838
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KEYWORDS
Laser sintering

Phonons

Raman spectroscopy

Stereolithography

Aluminum

Superlattices

Gallium nitride

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