Paper
11 June 2003 Semiconductor tunneling structure with self-assembled quantum dots for multi-logic cellular automata module
Alexander G. Khitun, S. Hong, Kang Lung Wang
Author Affiliations +
Abstract
We proposed and analyzed a semiconductor multi-barrier tunneling structure, which is incorporated with a quantum dot layer for a cellular automata logic module. Both in-plane and cross plane directions of tunneling in the self-assembled quantum dot layer were taken into consideration. Nonlinear I-V characteristics as a result of tunneling of a multi-cell system were simulated and used for the modular-logic construction. Elemental units, "AND," "OR" and "EXCHANGE" gate operations where shown. In addition, we demonstrated a set of local transition rules for use in one logic module driven by the edge bias. The stability of the scheme with respect to material structure imperfections is discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander G. Khitun, S. Hong, and Kang Lung Wang "Semiconductor tunneling structure with self-assembled quantum dots for multi-logic cellular automata module", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514475
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Logic

Quantum dots

Silicon

Resistance

Germanium

Numerical simulations

Semiconductors

Back to Top