Carbon layers for integrated optics

Vaclav Prajzler; Ivan Huettel; Josef Schroefel; Pavla Nekvindova; Jan Gurovic; Anna Mackova

doi:10.1117/12.498535

8 July 2003 Carbon layers for integrated optics

Vaclav Prajzler, Ivan Huettel, Josef Schroefel, Pavla Nekvindova, Jan Gurovic, Anna Mackova

Proceedings Volume 5036, Photonics, Devices, and Systems II; (2003) https://doi.org/10.1117/12.498535
Event: Photonics, Devices, and Systems II, 2002, Prague, Czech Republic

Abstract

Study of fabrication and properties of the carbon layers by using the PACVD (Plasma Assisted Chemical Vapor Deposition) apparatus is reported. The layers were grown on silicon substrates with methane as the precursor and were then doped with the erbium ions by treating the fabricated samples in glycerin or in the solution of erbium nitrate. To obtain deeper erbium containing carbon layers (up to 1 μm) the “sandwich method” was used based on repetition (three times) of carbon deposition and subsequent diffusion of erbium after which followed annealing in vacuum oven. The obtained results proved that it is in principle possible to fabricate the erbium containing carbon thin optical layers.

Citation Download Citation

Vaclav Prajzler, Ivan Huettel, Josef Schroefel, Pavla Nekvindova, Jan Gurovic, and Anna Mackova "Carbon layers for integrated optics", Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); https://doi.org/10.1117/12.498535

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