SOI silicon as structural layer for NEMS applications

Maria Villarroya; Eduard Figueras; Francesc Perez-Murano; Francesca Campabadal; Jaume Esteve; Nuria Barniol

doi:10.1117/12.499010

24 April 2003 SOI-silicon as structural layer for NEMS applications

Maria Villarroya, Eduard Figueras, Francesc Perez-Murano, Francesca Campabadal, Jaume Esteve, Nuria Barniol

Proceedings Volume 5116, Smart Sensors, Actuators, and MEMS; (2003) https://doi.org/10.1117/12.499010
Event: Microtechnologies for the New Millennium 2003, 2003, Maspalomas, Gran Canaria, Canary Islands, Spain

Abstract

The objective of this paper is to present the compatibilization between a standard CMOS on bulk silicon process and the fabrication of nanoelectromechanical systems using Silicon On Insulator (SOI) wafers as substrate. This compatibilization is required as first step to fabricate a very high sensitive mass sensor based on a resonant cantilever with nanometer dimensions using the crystal silicon COI layer as the structural layer. The cantilever is driven electrostatically to its resonance frequency by an electrode placed parallel to the cantilever. A capacitive readout is performed. To achieve very high resolution, very small dimensions of the cantilever (nanometer range) are needed. For this reason, the control and excitation circuitry has to be integrated on the same substrate than the cantilever. Prior to the development of this sensor, it is necessary to develop a substrate able to be used first to integrate a standard CMOS circuit and afterwards to fabricate the nano-resonator. Starting from a SOI wafer and using very simple processes, the SOI silicon layer is removed, except from the areas in which nano-structures will be fabricated; obtaining a silicon substrate with islands with a SOI structure. The CMOS circuitry will be integrated on the bulk silicon region, while the remainder SOI region will be used for the nanoresonator. The silicon oxide of this SOI region is used as insulator; and as sacrificial layer, etched to release the cantilever from the substrate. To assure the cover of the different CMOS layers over the step of the islands, it is essential to avoid very sharp steps.

Citation Download Citation

Maria Villarroya, Eduard Figueras, Francesc Perez-Murano, Francesca Campabadal, Jaume Esteve, and Nuria Barniol "SOI-silicon as structural layer for NEMS applications", Proc. SPIE 5116, Smart Sensors, Actuators, and MEMS, (24 April 2003); https://doi.org/10.1117/12.499010

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