Paper
30 September 2003 Mode-locked fiber lasers based on semiconductor saturable absorbers
Author Affiliations +
Abstract
This paper reviews recent progress in ultrashort pulse generation with mode-locked fiber lasers utilizing semiconductor saturable absorbers to initiate the mode-locking mechanism and to stabilize the laser pulse train. The saturable absorbers were monolithically grown by molecular beam epitaxy on top of a Burstein-Moss shift Ga0.47In0.53As/InP distributed Bragg reflector. The design guidelines and the main features of the semiconductor saturable absorber mirrors are summarized. Synchronization of a harmonically mode-locked pulse train to an external signal and repetition rate stabilization is demonstrated by directly modulating the 980 nm pump diode laser used both to provide gain and to optically modulate a semiconductor saturable absorber mirror.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mircea Guina and O. G. Okhotnikov "Mode-locked fiber lasers based on semiconductor saturable absorbers", Proc. SPIE 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, (30 September 2003); https://doi.org/10.1117/12.520103
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Mode locking

Modulation

Fiber lasers

Semiconductors

Semiconductor lasers

Reflectivity

Quantum wells

RELATED CONTENT

Quantum dot based mode-locked AlGaInP-VECSEL
Proceedings of SPIE (March 04 2015)
Passively mode locked Er doped fiber laser based on a...
Proceedings of SPIE (October 24 2014)
Pulse shortening of an ultrafast VECSEL
Proceedings of SPIE (March 10 2016)
Ultrafast fiber lasers for homeland security
Proceedings of SPIE (September 23 2005)

Back to Top