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8 December 2003 Effect of free carriers and excitons on the gain and temperature characteristics of InAs/InGaAs quantum dot lasers
Amit A. Dikshit, Jon M. Pikal
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Proceedings Volume 5248, Semiconductor Optoelectronic Devices for Lightwave Communication; (2003) https://doi.org/10.1117/12.513218
Event: ITCom 2003, 2003, Orlando, Florida, United States
Abstract
In this work we study the role of free carriers and excitons on the characteristics of 1.3 μm InAs/InGaAs quantum dot lasers. The study is carried out theoretically by building a mathematical model to calculate the threshold current in the laser and the charateristic temperature, T0. In order to determine the role of free carrier and excitons on the laser characteristics the model allows for different carrier distribution assumptions to be used, and we look at three cases; all free carriers, all excitons, and both free carriers and excitons in the dots. Our model results show that if we allow either free carriers or excitons to exist but not both, the calculated threshold current and T0 do not match with the experimental values. Thus we conclude that both free and bound carriers must exist and develop a method for modeling this case. We use a modified form of the Saha equation to calculate the ratio of free carriers to excitons and modify the material gain to account for this ratio. This model results in a threshold current density of approximately 39 A/cm2 and a T0 of 83 K, both of which are in excellent agreement with experimental results.
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Amit A. Dikshit and Jon M. Pikal "Effect of free carriers and excitons on the gain and temperature characteristics of InAs/InGaAs quantum dot lasers", Proc. SPIE 5248, Semiconductor Optoelectronic Devices for Lightwave Communication, (8 December 2003); https://doi.org/10.1117/12.513218
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KEYWORDS
Excitons
Electrons
Laser damage threshold
Performance modeling
Quantum dot lasers
Temperature metrology
Doping
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