Gamma-X band mixing in GaAs/AlAs superlattice

Guoyun Ru; Z. B. Chen; X. Yu; Fow-Sen Choa; Terrance Worchesky; F. Liu; C. Lu; Jacob B. Khurgin

doi:10.1117/12.544034

15 December 2003 Gamma-X band mixing in GaAs/AlAs superlattice

Guoyun Ru, Z. B. Chen, X. Yu, Fow-Sen Choa, Terrance Worchesky, F. Liu, C. Lu, Jacob B. Khurgin

Proceedings Volume 5260, Applications of Photonic Technology 6; (2003) https://doi.org/10.1117/12.544034
Event: Applications of Photonic Technology, 2003, Quebec City, Québec, Canada

Abstract

GaAs/AlAs superlattices (SLs) were grown by MOCVD. The temperature dependence of photoluminescence was measured. The type II-transition dominated PL spectrum was achieved by controlling the layers thickness of GaAs and AlAs at low temperature. Such SLs with long carrier lifetime is very attractive for low crosstalk semiconductor optical amplifier applications.

Citation Download Citation

Guoyun Ru, Z. B. Chen, X. Yu, Fow-Sen Choa, Terrance Worchesky, F. Liu, C. Lu, and Jacob B. Khurgin "Gamma-X band mixing in GaAs/AlAs superlattice", Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); https://doi.org/10.1117/12.544034

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