Infrared spectroscopic ellipsometry in semiconductor manufacturing

Pierre-Yves Guittet; Ulrich Mantz; Peter Weidner; Jean-Louis Stehle; Marc Bucchia; Sophie Bourtault; Dorian Zahorski

doi:10.1117/12.533935

24 May 2004 Infrared spectroscopic ellipsometry in semiconductor manufacturing

Pierre-Yves Guittet, Ulrich Mantz, Peter Weidner, Jean-Louis Stehle, Marc Bucchia, Sophie Bourtault, Dorian Zahorski

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.533935
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Infrared spectroscopic ellipsometry (IRSE) metrology is an emerging technology in semiconductor production environment. Infineon Technologies SC300 implemented the first worldwide automated IRSE in a class 1 clean room in 2002. Combining properties of IR light -- large wavelength, low absorption in silicon -- with a short focus optics -- no backside reflection -- which allow model-based analysis, a large number of production applications were developed. Part of Infineon IRSE development roadmap is now focused on depth monitoring for arrays of 3D dry-etched structures. In trench DRAM manufacturing, the areal density is high, and critical dimensions are much lower than mid-IR wavelength. Therefore, extensive use of effective medium theory is made to model 3D structures. IR-SE metrology is not limited by shrinking critical dimensions, as long as the areal density is above a specific cut-off value determined by trenches dimensions, trench-filling and surrounding materials. Two applications for depth monitoring are presented. 1D models were developed and successfully applied to the DRAM trench capacitor structures. Modeling and correlation to reference methods are shown as well as dynamic repeatability and gauge capability results. Limitations of the current tool configuration are reviewed for shallow structures.

Citation Download Citation

Pierre-Yves Guittet, Ulrich Mantz, Peter Weidner, Jean-Louis Stehle, Marc Bucchia, Sophie Bourtault, and Dorian Zahorski "Infrared spectroscopic ellipsometry in semiconductor manufacturing", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.533935

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