157-nm single-layer resist based on novel monocyclic fluorinated polymer

Akihiko Otoguro; Shigeo Irie; Toshiro Itani; Kiyoshi Fujii; Yoko Takebe; Yasuhide Kawaguchi; Osamu Yokokoji

doi:10.1117/12.535013

14 May 2004 157-nm single-layer resist based on novel monocyclic fluorinated polymer

Akihiko Otoguro, Shigeo Irie, Toshiro Itani, Kiyoshi Fujii, Yoko Takebe, Yasuhide Kawaguchi, Osamu Yokokoji

Author Affiliations +

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.535013
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Fluorinated polymers are key materials for single-layer resists used in 157-nm lithography. We have been studying fluorinated polymers to determine their potential for use as the base resin and have developed a new monocyclic fluorinated polymer that has high transmittance (an absorption coefficient of 0.1 μm^-1) at a 157-nm exposure wavelength and high dry-etching resistance (a dry-etching rate of 1.86 times that of a KrF resist) under hard mask dry-etching conditions. Moreover, it has a high dissolution rate in standard aqueous tetramethylammoniumhydroxide developer (a dissolution rate of more than 600 nm/s). Using this polymer with adamanthylmethoxymethyl as a protecting group, we were able to resolve a 60-nm line-and-space pattern using a 0.90 numerical aperture 157-nm laser micro-stepper along with a resolution-enhancement alternating phase-shift mask technique. This polymer has enabled both high dry-etching resistance (a dry-etching rate equal to 1.43 times that of a KrF resist) and good imaging performance.

Citation Download Citation

Akihiko Otoguro, Shigeo Irie, Toshiro Itani, Kiyoshi Fujii, Yoko Takebe, Yasuhide Kawaguchi, and Osamu Yokokoji "157-nm single-layer resist based on novel monocyclic fluorinated polymer", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.535013

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