GaGeSb alloys for high-speed reversible phase-change optical recording

Dimitre Z. Dimitrov; Cvetanka Babeva; Shun-Te Cheng; Wei-Chih Hsu; Ming-Hsun Hsieh; Song-Yeu Tsai

doi:10.1117/12.557103

9 September 2004 GaGeSb alloys for high-speed reversible phase-change optical recording

Dimitre Z. Dimitrov, Cvetanka Babeva, Shun-Te Cheng, Wei-Chih Hsu, Ming-Hsun Hsieh, Song-Yeu Tsai

Proceedings Volume 5380, Optical Data Storage 2004; (2004) https://doi.org/10.1117/12.557103
Event: Optical Data Storage Topical Meeting, 2004, Monterey, California, United States

Abstract

New Ga doped GeSb based phase-change materials are investigated. These materials possess good optical contrast at short wavelengths. Crystallization temperature increasing and grain size refinement are obtained by addition of Ga. More than 50 dB CNR and 25 dB erasability are measured in disks using blue laser.

Citation Download Citation

Dimitre Z. Dimitrov, Cvetanka Babeva, Shun-Te Cheng, Wei-Chih Hsu, Ming-Hsun Hsieh, and Song-Yeu Tsai "GaGeSb alloys for high-speed reversible phase-change optical recording", Proc. SPIE 5380, Optical Data Storage 2004, (9 September 2004); https://doi.org/10.1117/12.557103

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available