Ion beam synthesis of cobalt silicides in Si and SiGe

G. G. Gumarov; V. Yu. Petukhov; V. A. Shustov; Oleg P. Pchelyakov; V. I. Mashanov; Il'dus B. Khaibullin

doi:10.1117/12.557272

28 May 2004 Ion beam synthesis of cobalt silicides in Si and SiGe

G. G. Gumarov, V. Yu. Petukhov, V. A. Shustov, Oleg P. Pchelyakov, V. I. Mashanov, Il'dus B. Khaibullin

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.557272
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

Cobalt silicide layers were formed in Si and Si_1-xGe_x/Si heterostructures by using ion beam synthesis (IBS) at specified regimes and conditions. Effect of the type of the initial target and its temperature during implantation on the phase composition and structure of synthesized layers were investigated. The nonmonotonic dependence of the sheet resistance of synthesized films on ion current density was detected. Thin CoSi₂ films on Si_0.6Ge_0.4 structures with the sheet resistance of 17 Ohm/ were obtained using IBS with subsequent rapid thermal annealing.

Citation Download Citation

G. G. Gumarov, V. Yu. Petukhov, V. A. Shustov, Oleg P. Pchelyakov, V. I. Mashanov, and Il'dus B. Khaibullin "Ion beam synthesis of cobalt silicides in Si and SiGe", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.557272

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available