Memory operation of an InGaAs/InP waveguide modulator with two coupled quantum wells in self-electro-optic effect device configuration

Heinz-Christoph Neitzert

doi:10.1117/12.545417

18 August 2004 Memory operation of an InGaAs/InP waveguide modulator with two coupled quantum wells in self-electro-optic effect device configuration

Heinz-Christoph Neitzert

Author Affiliations +

Proceedings Volume 5451, Integrated Optics and Photonic Integrated Circuits; (2004) https://doi.org/10.1117/12.545417
Event: Photonics Europe, 2004, Strasbourg, France

Abstract

We realized an InGaAs/InP pin-diode photodiode in monomode waveguide configuration. Measuring the photocurrent spectra as a function of the applied reverse bias voltage under illumination of the pin-diode with TE polarized light (1510-1580 nm), we observe one dominant peak, whose position shifts linearly with increasing wavelength towards higher reverse bias voltages. By comparing the peak position with the energies, calculated for the different interband transitions in the InGaAs quantum well and taking into account the polarization dependence, we assign this peak to the optical transition between the heavy-hole energy level and the second electron energy level in the quantum well. By operating the pin-diode in an resistor biased Self-Electrooptic Effect Device configuration we clearly observe bistability at a wavelength of 1550nm. The possible operation of this device as smart waveguide photoreceiver with flip-flop functionality is demonstrated.

Citation Download Citation

Heinz-Christoph Neitzert "Memory operation of an InGaAs/InP waveguide modulator with two coupled quantum wells in self-electro-optic effect device configuration", Proc. SPIE 5451, Integrated Optics and Photonic Integrated Circuits, (18 August 2004); https://doi.org/10.1117/12.545417

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