Glassy behavior of a two-dimensional electron system in Si in parallel magnetic fields

Jan Jaroszynski; Dragana Popovic; Teun M. Klapwijk

doi:10.1117/12.545304

25 May 2004 Glassy behavior of a two-dimensional electron system in Si in parallel magnetic fields

Jan Jaroszynski, Dragana Popovic, Teun M. Klapwijk

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Proceedings Volume 5469, Fluctuations and Noise in Materials; (2004) https://doi.org/10.1117/12.545304
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

Studies of low-frequency resistance noise show that the glassy freezing of the two-dimensional electron system (2DES) in Si in the vicinity of the metal-insulator transition (MIT) persists in parallel magnetic fields B of up to 9 T. At low B, both the glass transition density n_g and n_c, the critical density for the MIT, increase with B such that the width of the metallic glass phase (n_c < n_s < n _g) increases with B. At higher B, where the 2DES is spin polarized, n_c and n_g no longer depend on B. Our results demonstrate that charge, as opposed to spin, degrees of freedom are responsible for glassy ordering of the 2DES near the MIT.

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Jan Jaroszynski, Dragana Popovic, and Teun M. Klapwijk "Glassy behavior of a two-dimensional electron system in Si in parallel magnetic fields", Proc. SPIE 5469, Fluctuations and Noise in Materials, (25 May 2004); https://doi.org/10.1117/12.545304

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